Excellent power generation performance
210 mm wafer with SMBB cell technology
Up to 95% bifaciality
Competitive high-temperature performance and improved temperature coefficient (-0.24%/°C).
Better low-light response of HJT technology leads to higher power generation.
Consistent reliability
N-type with lower LID and LeTID.
Industry-leading TCO thin-film cell technology contributes to excellent anti-PID performance.
Sealing with a PIB-based sealant gives stronger water resistance, better airtightness and longer module life.
Shorter payback time
Lower BoS costs ensure a better LCOE.
More environmentally friendly
Low-temperature welding technology and a shorter manufacturing process reduce CO2 emissions.
